EE-SY110【PDF 1/2 页】SENSR OPTO TRANS 5MM REFL TH PCB

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Sheet目录410

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Photomicrosensor (Reflective)

EE-SY110

Be sure to read Precautions on page 25.

■ Dimensions

Note: All units are in millimeters unless otherwise indicated.

■ Features

? Compact reflective model with a molded housing.

■ Absolute Maximum Ratings (Ta = 25 ° C)

Four, 0.5

Emitter

Item

Forward current

Symbol

I F

Rated value

50 mA

(see note 1)

15.2 ± 0.2

Four, R1.5

Detector

Pulse forward cur-

rent

Reverse voltage

Collector–Emitter

voltage

Emitter–Collector

I FP

V R

V CEO

V ECO

(see note 2)

30 V

---

voltage

Collector current

I C

20 mA

Four, 0.25

Collector dissipa-

tion

P C

100 mW

(see note 1)

15 to 1 8

Ambient tem-

perature

Operating

Storage

Topr

Tstg

–40 ° C to 85 ° C

Internal Circuit

Soldering temperature

Tsol

260 ° C

(see note 3)

Unless otherwise specified, the

tolerances are as shown below.

Note: 1. Refer to the temperature rating chart if the ambient temper-

ature exceeds 25 ° C.

2. The pulse width is 10 μ s maximum with a frequency of

100 Hz.

Dimensions

Tolerance

3. Complete soldering within 10 seconds.

3 mm max.

± 0.2

Terminal No.

Name

Anode

Cathode

Collector

Emitter

3 < mm ≤ 6

6 < mm ≤ 10

10 < mm ≤ 18

18 < mm ≤ 30

± 0.24

± 0.29

± 0.35

± 0.42

■ Electrical and Optical Characteristics (Ta = 25 ° C)

Item

Symbol

Value

Condition

Emitter

Detector

Forward voltage

Reverse current

Peak emission wavelength

Light current

Dark current

Leakage current

V F

I R

λ P

I L

I D

I LEAK

1.2 V typ., 1.5 V max.

0.01 μ A typ., 10 μ A max.

940 nm typ.

200 μ A min., 2,000 μ A max.

2 nA typ., 200 nA max.

2 μ A max.

I F = 30 mA

V R = 4 V

I F = 20 mA

I F = 20 mA, V CE = 10 V

White paper with a reflection ratio of

90%, d = 5 mm (see note)

V CE = 10 V, 0 l x

I F = 20 mA, V CE = 10 V with no reflec-

tion

Collector–Emitter saturated volt- V CE (sat)

age

---

Peak spectral sensitivity wave-

λ P

850 nm typ.

V CE = 10 V

length

Rising time

Falling time

30 μ s typ.

V CC = 5 V, R L = 1 k Ω , I L = 1 mA

Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.

150

EE-SY110 Photomicrosensor (Reflective)

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